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PD - 94434
AUTOMOTIVE MOSFET
IRF2204
Typical Applications

HEXFET(R) Power MOSFET
D
Electric Power Steering 14 Volts Automotive Electrical Systems Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax
VDSS = 40V
G S
Features

RDS(on) = 3.6m ID = 210A
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
TO-220AB
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw
Max.
210 150 850 330 2.2 20 460 See Fig.12a, 12b, 15, 16 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
Typ.
--- 0.50 ---
Max.
0.45 --- 62
Units
C/W
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IRF2204
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff.
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. 40 --- --- 2.0 120 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.041 3.0 --- --- --- --- --- --- 130 35 39 15 140 62 110 4.5 7.5 5890 1570 130 8000 1370 2380
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 3.6 m VGS = 10V, ID = 130A 4.0 V VDS = 10V, ID = 250A --- S VDS = 10V, ID = 130A 20 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 200 ID = 130A 52 nC VDS = 32V 59 VGS = 10V --- VDD = 20V --- ID = 130A ns --- RG = 2.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 32V, = 1.0MHz --- VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 210 showing the A G integral reverse --- --- 850 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 130A, VGS = 0V --- 68 100 ns TJ = 25C, IF = 130A --- 120 180 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF2204
10000
TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
10000
TOP
I D, Drain-to-Source Current (A)
1000
BOTTOM
1000
I D, Drain-to-Source Current (A)
BOTTOM
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V
100
100
4.5V
4.5V
10
10
20s PULSE WIDTH T J= 25 C
1 0.1 1 10 100
20s PULSE WIDTH T J= 175 C
1 0.1 1 10 100
V DS Drain-to-Source Voltage (V) ,
V DS Drain-to-Source Voltage (V) ,
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
2.5
I D = 210A
ID , Drain-to-Source Current ( )
T J = 175C
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1.5
100.00
T J = 25C
1.0
0.5
10.00 4.0 5.0 6.0
VDS = 25V 20s PULSE WIDTH
7.0 8.0 9.0 10.0
V GS = 10V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature
( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF2204
100000 VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = C gd Coss = C + C ds gd
12
I D = 130A VDS = 32V VDS = 20V
10
10000
Ciss Coss
1000
VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
8
6
Crss
100
4
2
10 1 10 100
0 0 30 60 90 120 150
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
10000 OPERATION IN THIS AREA LIMITED BY R DS(on)
TJ = 175 C
100
ID, Drain-to-Source Current (A)
1000
I SD , Reverse Drain Current (A)
10
100
100sec 1msec
T J= 25 C
1
10 Tc = 25C Tj = 175C Single Pulse 1 1 10 VDS , Drain-toSource Voltage (V) 10msec
V GS = 0 V
0.1 0.0 0.5 1.0 1.5 2.0 2.5
100
V SD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF2204
250
LIMITED BY PACKAGE
VDS VGS RG
RD
200
D.U.T.
+
ID , Drain Current (A)
-VDD
150
10V
Pulse Width 1 s Duty Factor 0.1 %
100
Fig 10a. Switching Time Test Circuit
50
VDS 90%
0 25 50 75 100 125 150 175
TC , Case Temperature ( C)
Fig 9. Maximum Drain Current Vs. Case Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1
(Z thJC )
D = 0.50
0.1
0.20 0.10
Thermal Response
0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE)
P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1 / t 2 +TC 1
J = P DM x Z thJC
0.001 0.00001
0.0001
0.001
0.01
0.1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF2204
900
15V
TOP
750
ID 52A 91A 130A
EAS , Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
600
BOTTOM
RG
20V
D.U.T
IAS tp
+ V - DD
A
450
0.01
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
300
150
0 25 50 75 100 125 150 175
Starting Tj, Junction Temperature
( C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
VGS(th) Gate threshold Voltage (V)
4.0
3.5
3.0
Charge
ID = 250A
2.5
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
2.0
50K 12V .2F .3F
1.5
D.U.T. VGS
3mA
+ V - DS
1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200
T J , Temperature ( C )
IG ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
6
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IRF2204
1000
Duty Cycle = Single Pulse
0.01
Avalanche Current (A)
100
0.05 0.10
10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
500
EAR , Avalanche Energy (mJ)
400
TOP Single Pulse BOTTOM 10% Duty Cycle ID = 210A
300
200
100
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). t av = Average time in avalanche. 175 D = Duty cycle in avalanche = t av *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 16. Maximum Avalanche Energy Vs. Temperature
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IRF2204
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG V GS * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test
+ V DD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period
[VGS=10V ] ***
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
[VDD]
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
[ISD]
*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET(R) power MOSFETs
8
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IRF2204
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) 3.78 (.149) 3.54 (.139) -A6.47 (.255) 6.10 (.240) -B4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048)
4 15.24 (.600) 14.84 (.584)
1.15 (.045) MIN 1 2 3
LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN
14.09 (.555) 13.47 (.530)
4.06 (.160) 3.55 (.140)
3X 3X 1.40 (.055) 1.15 (.045)
0.93 (.037) 0.69 (.027) M BAM
3X
0.55 (.022) 0.46 (.018)
0.36 (.014)
2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH
2.92 (.115) 2.64 (.104)
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
EXAMPLE : THIS IS AN IRF1010 WITH ASSEMBLY LOT CODE 9B1M
A
INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE
PART NUMBER IRF1010 9246 9B 1M
DATE CODE (YYWW) YY = YEAR WW = WEEK
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.06mH RG = 25, IAS = 130A. (See Figure 12). ISD 130A, di/dt 170A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%.
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/02
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